transistor(npn) features ? high current gain marking: 3ss m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 80 v v ceo collector - emitter voltage 80 v v ebo emitter - base voltage 12 v i c collector current 500 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 100 a , i e =0 80 v collector - emitter sustain voltage v c e o (sus) i c = 100 a , v b e =0 80 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 12 v collector cut - off current i cbo v cb = 60 v, i e =0 0.1 a collector cut - off current i c es v c e = 60 v, v be =0 0.5 a emitter cut - off current i ebo v eb = 10 v, i c =0 0.1 a h fe (1) * v ce = 5 v, i c = 1 0 m a 10 k dc current gain h fe (2) * v ce = 5 v, i c = 1 0 0 ma 10 k v ce(sat) 1 * i c = 1 0 m a, i b = 0. 0 1 ma 1.2 v collector - emitter saturation voltage v ce(sat) 2 * i c = 10 0 m a, i b = 0. 1 ma 1.5 v base - emitter voltage v b e * v ce = 5 v, i c = 100 ma 2 v collector output capacitance c ob v cb = 1 v, i e =0, f=1 m hz 8 pf transition frequency f t v ce = 5 v,i c = 10 ma , f=1 00 mhz 125 mhz * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 23 1. base 2. emitter 3. collector MMBTA28 1 date:2011/05 www.htsemi.com semiconductor jinyu
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